Direct Evidence of Phosphorus-Defect Complexes in n -Type Amorphous Silicon and Hydrogenated Amorphous Silicon
- Department of Physics, Washington State University, Pullman, Washington 99164-2814 (United States)
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393 (United States)
- Department of Applied Science, Brookhaven National Laboratory, Upton, New York 11973 (United States)
We use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex ({sup {asterisk}}D{sup {minus}}) in n -type hydrogenated amorphous Si (a -Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected after annihilation gives a characteristic P signature, regarded as a {sup {asterisk}}D{sup {minus}} {open_quotes}fingerprint.{close_quotes} Additional evidence is obtained from a comparison to P-implanted amorphized Si, as well as from theoretical calculations. This work lays the foundation for PAS studies of impurity-defect related processes in a -Si:H. {copyright} {ital 1999} {ital The American Physical Society}
- Research Organization:
- National Renewable Energy Laboratory
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 700969
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 19 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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