Hydrogen diffusion and mobile hydrogen in amorphous silicon

Journal Article · Wed Sep 01 00:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.7725· OSTI ID:686457

Branz, H M ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Diffusion phenomena in hydrogenated amorphous silicon (a-Si:H) are modeled assuming that mobile H excited from Si-H bonds normally annihilates at dangling-bond defects, as in the {open_quotes}H collision{close_quotes} model of light-induced metastability. This diffusion model explains the long-standing puzzle of the doping dependence of the hydrogen diffusion coefficient D{sub H}. It also yields the magnitudes of the D{sub H} Arrhenius prefactors in doped and undoped a-Si:H. Mobile H diffuses over an energy barrier of about 0.3 eV; at room temperature, its diffusion rate is slightly greater than that of H in crystalline Si. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 686457
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL BONDS
DEFECTS
DIFFUSION
DOPED MATERIALS
HYDROGEN
HYDROGENATION
SILICON