Microscopic nature of Staebler-Wronski defect formation in amorphous silicon

Journal Article · Wed Dec 31 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120740· OSTI ID:573731

Biswas, R; Pan, B C ^[1]

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1. Department of Physics and Astronomy, Microelectronics Research Center and Ames Laboratory-- US Department of Energy, Iowa State University, Ames, Iowa 50011 (United States)

Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H{sub 2}{sup {asterisk}} defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 573731
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 72; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
CHEMICAL BONDS
DEFECTS
HYDROGEN
HYDROGEN ADDITIONS
METASTABLE STATES
SILICON
SIMULATION