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Growth of selective tungsten films on self-aligned CoSi/sub 2/ by low pressure chemical vapor deposition

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.97227· OSTI ID:7007380

The selective deposition of tungsten films onto CoSi/sub 2/ and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF/sub 6/ and H/sub 2/, uniformly thick tungsten films can be deposited onto CoSi/sub 2/ without substrate alteration. In patterned structures, however, void formation was found at the perimeters of CoSi/sub 2/ contacts to silicon, indicating encroachment of WF/sub 6/ down the edge of the silicide-Si interface. In WF/sub 6/ and Ar, the film thickness was limited to 10 nm and some Si was locally consumed from the upper part of the CoSi/sub 2/ film. Transmission electron diffraction showed evidence of Co/sub 2/Si formation in these areas.

Research Organization:
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, California 94088
OSTI ID:
7007380
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:25; ISSN APPLA
Country of Publication:
United States
Language:
English