Growth of selective tungsten films on self-aligned CoSi/sub 2/ by low pressure chemical vapor deposition
The selective deposition of tungsten films onto CoSi/sub 2/ and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF/sub 6/ and H/sub 2/, uniformly thick tungsten films can be deposited onto CoSi/sub 2/ without substrate alteration. In patterned structures, however, void formation was found at the perimeters of CoSi/sub 2/ contacts to silicon, indicating encroachment of WF/sub 6/ down the edge of the silicide-Si interface. In WF/sub 6/ and Ar, the film thickness was limited to 10 nm and some Si was locally consumed from the upper part of the CoSi/sub 2/ film. Transmission electron diffraction showed evidence of Co/sub 2/Si formation in these areas.
- Research Organization:
- Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, California 94088
- OSTI ID:
- 7007380
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:25; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
COBALT
COBALT COMPOUNDS
COBALT SILICIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
DIMENSIONS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDROGEN
METALS
MICROSCOPY
MICROSTRUCTURE
NONMETALS
REFRACTORY METAL COMPOUNDS
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE COATING
THICKNESS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
VOIDS