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High T/sub c/ YBa/sub 2/Cu/sub 3/O/sub 7/. sqrt. /sub x/ thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide target

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99771· OSTI ID:7006853

Thin films of YBa/sub 2/Cu/sub 3/O/sub 7/..sqrt../sub x/ were deposited on Si substrates at 600--700 /sup 0/C by dc magnetron sputtering from a stoichiometric oxide target. Resistivity measurement results indicate that these films are superconducting with a zero resistance T/sub c/ as high as 76 K, without further high-temperature post-annealing treatments. These films give both core and valence-band x-ray photoemission, and x-ray diffraction spectra similar to those for superconducting films prepared with a high-temperature post-annealing step. No significant diffusion of Si from the substrate into the film was detected for the films deposited at 650 /sup 0/C or lower, according to depth profiles obtained using secondary ion mass spectrometry.

Research Organization:
IBM Almaden Research Center, San Jose, California 95120
OSTI ID:
7006853
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:26; ISSN APPLA
Country of Publication:
United States
Language:
English