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Preparation and characterization of high T sub c YBa sub 2 Cu sub 3 O sub 7 minus x thin films on silicon by dc magnetron sputtering from a stoichiometric oxide target

Conference · · AIP Conference Proceedings (American Institute of Physics); (USA)
OSTI ID:6948472
; ; ; ; ; ;  [1];  [2]
  1. IBM Almaden Research Center, San Jose, CA 95120 (USA)
  2. San Jose University, San Jose, CA 95192 (USA)

The effects of deposition temperature and O{sub 2} pressure during cool down on the superconducting properties of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films on Si substrates by DC magnetron sputtering from a stoichiometric oxide target are reported. Results from X-ray diffraction analysis indicate that the films deposited at 400 {degree}C or lower, at 650 {degree}C and cooled down in {gt}10{sup {minus}4} O{sub 2}, and at 650 {degree}C and cooled down in {gt}0.16 Torr O{sub 2} have, respectively, amorphous, tetragonal, and orthorhombic structure. Superconducting orthorhombic films with a zero resistance T{sub c} of as high as 76 K have been thus prepared on Si directly, without further heat treatments. The deposition of these films on Si is possible because of the minimal film-substrate interaction at the relatively low deposition temperature used, as indicated by the depth profiles obtained for these films using secondary ion mass spectrometry. Results of cross-sectional transmission electron microscopic studies of some of these films with different {Tc} and X-ray photoemission spectroscopic studies of the amorphous, tetragonal, and orthorhombic are also reported.

OSTI ID:
6948472
Report Number(s):
CONF-881035--
Journal Information:
AIP Conference Proceedings (American Institute of Physics); (USA), Journal Name: AIP Conference Proceedings (American Institute of Physics); (USA) Vol. 182:1; ISSN 0094-243X; ISSN APCPC
Country of Publication:
United States
Language:
English