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Sputter deposition of YBa sub 2 Cu sub 3 O sub 7 minus x films on Si at 500 degree C with conducting metallic oxide as a buffer layer

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104218· OSTI ID:7073923
;  [1]
  1. State University of New York at Buffalo, Buffalo, New York 14260 (USA). Department of Electrical and Computer Engineering State University of New York at Buffalo, Buffalo, New York 14260 (USA). Institute on Superconductivity, Room 217, Bonner Hall

Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films were deposited on Si substrates at 500 {degree}C by rf magnetron sputtering from a stoichiometric oxide target. Metallic oxide RuO{sub 2}, sputtered by reactive dc magnetron, was used as a buffer layer to nucleate the superconducting film and minimize the reactions between Si and superconductor. The as-deposited thin films, without further post high-temperature annealing, were completely superconductive at 79 K. Very smooth surface morphology was demonstrated by scanning electron microscopy. X-ray diffraction data indicated that the films had a randomly oriented polycrystalline structure. Auger electron spectroscopy did not reveal interdiffusion of elements in the three layers.

OSTI ID:
7073923
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:3; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English