Optically-saturable absorbing centers versus deep-level traps in semiconductor lasers
Conference
·
· AIP Conference Proceedings (American Institute of Physics); (USA)
OSTI ID:7004496
- The Johns Hopkins University, Department of Electrical and Computer Engineering, Baltimore, MD 21218 (US)
We compare the model of deep-level traps with that of the optically-saturable absorbing centers in semiconductor lasers. Their dynamic behavior is simulated by numerically solving the rate equations. The dependence on various laser parameters of the oscillation frequencies, the onset of the self-sustained pulsations (SSP), and the damping rate of the relaxation oscillations (RO) is also investigated. The results predicted by the two models are then compared with each other.
- OSTI ID:
- 7004496
- Report Number(s):
- CONF-8810399--
- Conference Information:
- Journal Name: AIP Conference Proceedings (American Institute of Physics); (USA) Journal Volume: 191:1
- Country of Publication:
- United States
- Language:
- English
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