Deep-level trap model of diode laser modulation: Significance of spontaneous emission and gain saturation

Journal Article · Sat Apr 15 04:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343413· OSTI ID:6355995

Bourkoff, E; Liu, X Y

We have investigated the effects of deep-level traps on the high-speed modulation behavior of semiconductor diode lasers. A set of three coupled, nonlinear rate equations which model the dynamic behavior of the diode laser has been numerically solved. Our model includes not only the effects of deep-level traps, but also of gain saturation, spontaneous emission into the lasing mode, carrier and photon lifetimes, and varying injection current densities. We show how the laser modulation frequency decreases with increasing trap density and how this behavior depends upon other laser parameters. In particular, we discuss effects of the gain saturation and spontaneous emission factors in the presence of deep-level traps. It turns out that these two parameters do not affect the oscillation frequency (either relaxation oscillation or self-sustained pulsations) very significantly. However, they are found to have profound effects on other aspects of the dynamic response. We also provide, for the first time, an analytical expression for the threshold current density. The dc responses with and without traps are compared as well.

• Research Organization: Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218
• OSTI ID: 6355995
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CARRIER LIFETIME
CURRENT DENSITY
ELECTRONIC STRUCTURE
FREQUENCY DEPENDENCE
LASERS
LIFETIME
MATHEMATICAL MODELS
MODULATION
NONLINEAR OPTICS
NUMERICAL SOLUTION
OPTICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TRAPS