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Trap versus absorber model for semiconductor laser dynamics

Thesis/Dissertation ·
OSTI ID:5630901
The author has compared the trap model to the absorber model by numerically simulating the responses of semiconductor lasers containing traps or absorbers with or without external optical feedback at low to moderate levels. He has discussed dependence of intensity oscillation frequency, onset of self-sustained pulsations and damping rate of relaxation oscillations on various lasers parameters. These include injection current, trap and absorber densities, gain saturation, spontaneous emission, photon lifetime and carrier lifetime. He has also investigated effects on intensity pulsations of external cavity length, phase shift in external cavity and feedback level. The results based on the trap and absorber models are in agreement with experimental data available in the literature. The comparison shows that there are no significant differences between the two models. A closer look at the rate equations and physical processes involved also suggests similarities. The only difference is that traps interact directly with carriers, while absorbers do not. This, however, will not result in significantly different laser dynamics, since the capture or release of electrons by traps is not the dominant process that alters the carrier density in dynamic responses. Contrary to certain conclusions made in the literature base on insufficient studies, he found that both models are capable of explaining relevant experimental observations published.
Research Organization:
Johns Hopkins Univ., Baltimore, MD (United States)
OSTI ID:
5630901
Country of Publication:
United States
Language:
English