Absorber versus trap model in solitary semiconductor lasers
Journal Article
·
· Journal of Applied Physics; (USA)
- Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (US)
The model of deep level traps is compared with that of optically saturable absorbing centers in solitary semiconductors lasers. The steady-state response is investigated both analytically and numerically. The dynamic behavior is simulated by numerically solving the rate equations. The dependence on various laser parameters of the oscillation frequencies, the onset of self-sustained pulsations (SSP), and the damping rate of relaxation oscillations (RO) is also investigated. In spite of the apparent differences between the two models, they nevertheless predict essentially similar behavior for semiconductor lasers not within an external cavity.
- OSTI ID:
- 7169033
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:4; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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