High-speed modulation of semiconductor diode lasers: Effects of deep-level traps
Conference
·
· AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA)
OSTI ID:5572086
- The Johns Hopkins University, Dept. of Electrical Computer Engineering, Baltimore, MD 21218 (US)
- Martin Marietta Laboratories, 1450 S. Rolling Rd., Baltimore, MD 21227
We have investigated the effects of deep-level traps on the high-speed modulation behavior of semiconductor diode lasers. A set of three coupled, nonlinear rate equations which model the dynamic behavior of the diode laser has been numerically solved. Our model includes not only the effects of deep-level traps, but also of gain saturation, spontaneous emission into the lasing modes, varying carrier and photon lifetimes, and varying injection current densities. We show how the laser modulation frequency decreases with increasing trap density and how this behavior depends upon various other laser characteristics.
- OSTI ID:
- 5572086
- Report Number(s):
- CONF-871147--
- Conference Information:
- Journal Name: AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA) Journal Volume: 172:1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Deep-level trap model of diode laser modulation: Significance of spontaneous emission and gain saturation
Trap versus absorber model for semiconductor laser dynamics
Optically-saturable absorbing centers versus deep-level traps in semiconductor lasers
Journal Article
·
Sat Apr 15 00:00:00 EDT 1989
· J. Appl. Phys.; (United States)
·
OSTI ID:6355995
Trap versus absorber model for semiconductor laser dynamics
Thesis/Dissertation
·
Mon Dec 31 23:00:00 EST 1990
·
OSTI ID:5630901
Optically-saturable absorbing centers versus deep-level traps in semiconductor lasers
Conference
·
Fri Oct 20 00:00:00 EDT 1989
· AIP Conference Proceedings (American Institute of Physics); (USA)
·
OSTI ID:7004496