Iii-v semiconductor quantum-well lasers and related opto-electronic devices on silicon. Technical report

Technical Report · Fri Dec 01 04:00:00 EST 1989

OSTI ID:7001870

Holonyak, N; Hsieh, K C; Stillman, G E

The research goal is to further develop quantum well heterostructure (QWH) lasers and to realize reliable Al(x)Ga(1-x)As-GaAs QWH lasers on Si. In spite of the significant lattice and thermal expansion mismatch between GaAs and Si, the idea of splicing III-V semiconductor technology, i.e., optoelectronics and photonics, onto Si has obvious appeal. Adding to this is the fact, as shown earlier in this work, that cw 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that the Si substrate serves as a better heat sink than GaAs. This makes possible the right-side-up heat sinking needed for electronic-photonic integrated circuits. This report contains research results on quantum well heterostructures on Si, impurity-induced layer disordering, phonon-assisted laser operations and other laser studies.

• Research Organization: Illinois Univ., Urbana, IL (USA)
• OSTI ID: 7001870
• Report Number(s): AD-A-216980/3/XAB; TR--2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DOCUMENT TYPES
ELECTRONIC CIRCUITS
ELEMENTS
EXPANSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT SINKS
HETEROJUNCTIONS
IMPURITIES
INTEGRATED CIRCUITS
JUNCTIONS
LASERS
LAYERS
MICROELECTRONIC CIRCUITS
PHONONS
PNICTIDES
PROGRESS REPORT
QUASI PARTICLES
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SINKS
SOLID STATE LASERS
SUBSTRATES
THERMAL EXPANSION