III-V semiconductor quantum well lasers and related opto-electronic devices on silicon. Technical report

Technical Report · Fri Jun 01 04:00:00 EDT 1990

OSTI ID:6451621

Holonyak, N; Hsieh, K C; Stillman, G E

For some time interests have been aroused by the III-V quantum well heterostructures (QWHs) and superlattices (SLs) and, in addition to fundamental effects, the special opportunities QWHs and SLs afford in making possible improved forms of lasers, not to mention other devices and optoelectronic systems. In this report, studies have been made of: (1) Al(x)Ga(1-x)As-GaAs lasers on Si, (2) impurity induced layer disordering (which is an especially advantageous phenomenon in QWHs and SLs), (3) phonon-assisted laser operation and its unambiguous identification by control of the cavity Q of QWH samples, (4) the use of cavity Q to fill the recombination spectrum of QWHs, and (5) hydrolization and reliability of Al(x)Ga(1-x)As-GaAs QWHs and SLs, and (6) various other laser problems associated with higher gap crystals such as In(y)(Al(x)Ga(1-x)(1-y)P).

• Research Organization: Illinois Univ., Urbana, IL (USA)
• OSTI ID: 6451621
• Report Number(s): AD-A-224120/6/XAB; CNN: DAAL03-89-K-0008
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
DOCUMENT TYPES
ELECTRO-OPTICAL EFFECTS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
JUNCTIONS
LASER MATERIALS
LASERS
LAYERS
MATERIALS
OPERATION
PHONONS
PNICTIDES
PROGRESS REPORT
QUANTUM ELECTRONICS
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS
SPECTRA
SUPERLATTICES