Semiconductor quantum-well lasers and related optoelectronic devices on silicon, III-V. Technical report
Although an ultimate goal of this work is to achieve long term reliable laser operation of Al(x)Ga(1-x)As-GaAs quantum-well heterostructures (QWH's), or similar III-V QWH's, grown on Si, this has proven to be a formidable enough problem that to the best of our knowledge no one has exceeded the results we reported in 1987 and 1988. This problem is of such dimensions that it may not be solved for as much as 10 years, or even more. All we know so far is that continuous (cw) 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that, indeed, the heat sinking of an Al(x)Ga(1-x)As-GaAs QWH laser on Si is better than a similar laser on a GaAs substrate. Nevertheless, the problem of growing better versions of these devices (i.e., long-lived high-performance cw 300 K lasers on Si) has run into the fundamental issue of the large GaAs-Si lattice and thermal expansion mismatch, and hence the built-in difficulty in reducing the defects guaranteed by mismatch. The authors worked further on the problem of Al(x)Ga(1-x)As-GaAs QWH lasers on Si, other QWH laser problems, as well as an impurity-induced layer disordering (or layer intermixing, IILD) and its application in laser devices this work is briefly described.
- Research Organization:
- Illinois Univ., Urbana, IL (USA). Dept. of Electrical and Computer Engineering
- OSTI ID:
- 5477353
- Report Number(s):
- AD-A-210758/9/XAB; TR--1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DOCUMENT TYPES
ELECTRO-OPTICAL EFFECTS
ELEMENTS
ENERGY
EXPANSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT
HETEROJUNCTIONS
IMPURITIES
JUNCTIONS
LASERS
LAYERS
OPERATION
PNICTIDES
PROGRESS REPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS
SUBSTRATES
THERMAL EXPANSION