Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilane

Journal Article · Thu Jan 01 04:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338836· OSTI ID:6999014

Hegedus, S S; Rocheleau, R E; Buchanan, W; Baron, B N

The photovoltaic performance of amorphous silicon p-i-n solar cells made by chemical-vapor deposition (CVD) from disilane is reported and analyzed. Intrinsic layers were deposited at rates from 0.2 to 50 A/s at temperatures from 380 to 460 /sup 0/C with and without boron doping. Device performance was insensitive to substantial differences in disilane purity. A cell efficiency of 4% was achieved. The primary limitation to higher efficiency was low fill factor (<50%) due to high series resistance (>18 ..cap omega.. cm/sup 2/). Analysis of the series resistance indicated a contact-related resistance of 4--12 ..cap omega.. cm/sup 2/ and a photoconductive resistance composed of intrinsic layer thickness-independent (10 ..cap omega.. cm/sup 2/) and thickness-dependent terms. Analysis of the voltage dependence of the current collection indicated a fill factor of 60% would be expected in the absence of series resistance. The maximum short-circuit current of 12.5 mA/cm/sup 2/ (normalized to 100 mW/cm/sup 2/) resulted with a boron-doped i layer deposited at 440 /sup 0/C at 3.3 A/s. Modeling of the collection efficiency indicated collection widths up to 0.33 ..mu..m for boron-doped and 0.24 ..mu..m for undoped p-i-n devices. In order to achieve high-efficiency cells using CVD from disilane, the limitations imposed by low photoconductivity, a high density of states, and restricted cell design imposed by the high deposition temperatures would have to be overcome.

• Research Organization: Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716
• OSTI ID: 6999014
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SILANES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING