Hydrogenated amorphous silicon produced by pyrolysis and photolysis of disilane

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5123152

Ashida, Y; Hirose, M; Isogaya, K; Kitagawa, N; Mishima, Y; Osuka, Y

A new class of hydrogenated amorphous silicon (a-Si:H) was prepared by the thermal CVD and photo-CVD of disilane. In the low pressure thermal CVD, the horizontal quartz tube heated by resistance heaters was used as a reactor. The growth rate of the thermal CVD a-Si:H films is plotted as a function of reciprocal substrate temperature. As a new alternative approach to prepare high quality CVD films at temperatures below 300/sup 0/C, the direct photochemical decomposition of disilane has been attempted utilizing a low pressure mercury lamp as a UV radiation source. In the case of undoped and phosphorus doped films, the growth rate is independent of the substrate temperature. In contrast to this, for boron doping, the growth rate has an activation energy of 0.64 eV as in the case of the thermal CVD although the growth rate of the photo-CVD is about three times as large as that of the thermal CVD. This implies that the photoCVD process in boron doping is dominated by the thermal reaction catalyzed with diborane. The dark conductivity and photoconductivity before and after light exposure (AM-1, 200 mW/cm/sup 2/) exhibit no change, indicating the absence of the light-soak degradation in photo-CVD films. The valency control in thermal CVD and photo-CVD is also successfully carried out.

• Research Organization: Corporate Development Department, Mitsuitoatsu Chemicals, Inc., Tokyo
• OSTI ID: 5123152
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILANES
PHOTOLYSIS
PYROLYSIS
SILICON
CHEMICAL VAPOR DEPOSITION
PRODUCTION
ACTIVATION ENERGY
AMORPHOUS STATE
CRYSTAL GROWTH
EV RANGE 01-10
FILMS
HYDROGENATION
CHEMICAL COATING
CHEMICAL REACTIONS
DECOMPOSITION
DEPOSITION
ELEMENTS
ENERGY
ENERGY RANGE
EV RANGE
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCHEMICAL REACTIONS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
THERMOCHEMICAL PROCESSES
140501* - Solar Energy Conversion- Photovoltaic Conversion