Minority-carrier lifetime in ITO/InP heterojunctions
Journal Article
·
· J. Appl. Phys.; (United States)
The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with N/sub A/ = 1 x 10/sup 16/ cm/sup -3/ is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.
- Research Organization:
- The Solar Energy Research Institute, Golden, Colorado 80401
- OSTI ID:
- 6998271
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CARRIER LIFETIME
CHALCOGENIDES
CHARGE CARRIERS
DATA
EXPERIMENTAL DATA
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LIFETIME
LUMINESCENCE
MATHEMATICAL MODELS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SIMULATION
TIN COMPOUNDS
TIN OXIDES
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CARRIER LIFETIME
CHALCOGENIDES
CHARGE CARRIERS
DATA
EXPERIMENTAL DATA
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LIFETIME
LUMINESCENCE
MATHEMATICAL MODELS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SIMULATION
TIN COMPOUNDS
TIN OXIDES