Minority-carrier lifetime in InP as a function of light bias

Conference · Sun Jan 01 04:00:00 EST 1995

OSTI ID:6468429

Yater, J A; Weinberg, I; Jenkins, P P; Landis, G A

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• OSTI ID: 6468429
• Report Number(s): N-95-18453; NASA-TM--106821; E--9363; NAS--1.15:106821; CONF-941203--; CNN: RTOP 233-01-OA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER LIFETIME
CHARGE CARRIERS
DOPED MATERIALS
ILLUMINANCE
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LIFETIME
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES