Minority-carrier lifetime damage coefficient of irradiated InP

Journal Article · Mon Sep 01 04:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366023· OSTI ID:538411

Keyes, B M; Ahrenkiel, R K ^[1]; Shaw, G J; Summers, G P ^[2]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
2. Naval Research Laboratory, Washington, D. C. 20375 (United States)

Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5{times}10{sup 15} and 1.3{times}10{sup 17}cm{sup {minus}3}) and p-type (2.5{times}10{sup 17}cm{sup {minus}3}) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10{sup 4} and 10{sup 5}, respectively. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 538411
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALPHA PARTICLES
CARRIER DENSITY
CARRIER LIFETIME
ELECTRON BEAMS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MEV RANGE 01-10
PHOTOLUMINESCENCE
PROTON BEAMS
RADIATION EFFECTS