Minority-carrier lifetime in n-Al/sub 0. 38/Ga/sub 0. 62/As

Journal Article · Sun May 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340423· OSTI ID:5219736

Ahrenkiel, R K; Dunlavy, D J; Loo, R Y; Kamath, G S

The minority-carrier lifetime in n-Al/sub 0.38/Ga/sub 0.62/As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1 x 10/sup 16/ cm/sup -3/ or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80501
• OSTI ID: 5219736
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CRYSTAL DOPING
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LIFETIME
LUMINESCENCE
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS