Dielectric properties of single crystals of Al[sub 2]O[sub 3], LaAlO[sub 3], NdGaO[sub 3], SrTiO[sub 3], and MgO at cryogenic temperatures

Journal Article · Sat Oct 01 04:00:00 EDT 1994 · IEEE Transactions on Microwave Theory and Techniques (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/22.320769· OSTI ID:6997309

Krupka, J ^[1]; Geyer, R G ^[2]; Kuhn, M; Hinken, J H ^[3]

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1. Inst. Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej, Warszawa (Poland)
2. National Inst. of Standards and Technology, Boulder, CO (United States). Electromagnetic Fields Div.
3. Forschungsgesellschaft fuer Informationstechnik mbH, Bad Salzdetfurth (Germany)

A dielectric resonator technique has been used for measurements of the permittivity and dielectric loss tangent of single-crystal dielectric substrates in the temperature range 20--300 K at microwave frequencies. Application of superconducting films made it possible to determine dielectric loss tangents of about 5 [times] 10[sup [minus]7] at 20 K. Two permittivity tensor components for uniaxially anisotropic samples were measured. Generally, single-crystal samples made of the same material by different manufacturers or by different processes have significantly different losses, although they have essentially the same permittivities. The permittivity of one crystalline ferroelectric substrate, SrTiO[sub 3], strongly depends on temperature. This temperature dependence can affect the performance of ferroelectric thin-film microwave devices, such as electronically tunable phase shifters, mixers, delay lines and filters.

• OSTI ID: 6997309
• Journal Information: IEEE Transactions on Microwave Theory and Techniques (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Microwave Theory and Techniques (Institute of Electrical and Electronics Engineers); (United States) Vol. 42:10; ISSN IETMAB; ISSN 0018-9480
• Country of Publication: United States
• Language: English

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