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Improvement in performance of electrically tunable devices based on nonlinear dielectric SrTiO{sub 3} using a homoepitaxial LaAlO{sub 3} interlayer

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.122031· OSTI ID:639819
; ;  [1];  [2]
  1. Superconductivity Technology Center, Mail Stop K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Department of Materials Science and Engineering, New Mexico Tech, Socorro, New Mexico 87801 (United States)

Improved structural and dielectric properties of nonlinear dielectric SrTiO{sub 3} thin films on LaAlO{sub 3} substrates were accomplished by incorporating a {ital homoepitaxial} LaAlO{sub 3} interlayer between the substrate and the dielectric film. Using this interlayer, the quality factor of SrTiO{sub 3} films with high-temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} electrodes on LaAlO{sub 3} substrates was improved by more than 50{percent} at 4.2 GHz and 4 K. This improvement, combined with no change in nonlinearity, led to greater than a 50{percent} enhancement of the finesse factor (defined as the product of the quality factor and the fractional shift resonant frequency) for the coplanar waveguide microwave resonators. The reduced planar defect density in the SrTiO{sub 3} films was attributed to this improvement. {copyright} {ital 1998 American Institute of Physics.}

OSTI ID:
639819
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 73; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English