Dielectric properties of thin film SrTiO{sub 3} grown on LaAlO{sub 3} with YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} electrodes

Conference · Fri Dec 30 23:00:00 EST 1994

OSTI ID:61242

Wu, H D; Barnes, F S ^[1]; Galt, D; Price, J ^[2]; Beall, J A ^[3]

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1. Univ. of Colorado, Boulder, CO (United States). Dept. of Electrical Engineering
2. Univ. of Colorado, Boulder, CO (United States). Dept. of Physics
3. National Institute of Standards and Technology, Boulder, CO (United States). Electromagnetic Technology Division

The authors have fabricated and characterized YBCO (YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}) microstrip resonators on LAO (LaAlO{sub 3}) substrates that include thin film STO (SrTiO{sub 3}) coplanar capacitors to study the dielectric properties of thin film STO. The low frequency capacitance of the STO/LAO capacitor is measured as a function of temperature and dc bias. They use the observed resonant frequencies to extract the microwave frequency capacitance of the structure and the Q`s to determine the microwave losses. A conformal map is developed and used to transform the observed capacitances into dielectric constant values for the thin film STO.

• OSTI ID: 61242
• Report Number(s): CONF-940142--; ISBN 0-8194-1451-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM OXIDES
BARIUM OXIDES
COPPER OXIDES
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
FERROELECTRIC MATERIALS
LANTHANUM OXIDES
MEASURING METHODS
MICROWAVE EQUIPMENT
STRONTIUM TITANATES
YTTRIUM OXIDES