Dielectric properties of materials at cryogenic temperatures and microwave frequencies

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:125813

Geyer, R G ^[1]; Krupka, J ^[2]

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1. National Institute of Standards and Technology, Boulder, CO (United States)
2. Instutut Mikroelektroniki i Optoelektroniki Politechniki Warszawsliej, Warszawa (Poland)

The permittivity and dielectric loss tangent of single- crystal quartz, cross-linked polystyrene (Rexolite), and polytetrafluoroethylene (Teflon) were measured at microwave frequencies and at temperatures of 77 K and 300 K using a dielectric resonator technique. Application of high-temperature superconducting (HTS) films as the endplates of the dielectric resonator made it possible to determine dielectric loss tangents of about 7 x 10{sup -6} at 77 K. Two permittivity tensor components for uniaxially anisotropic crystalline quartz were measured. Although the permittivities at 77 K changed very little from their room temperature values at 300 K, large changes in dielectric losses were observed. The decreased loss characteristics of these microelectronic substrates can markedly improve the performance of many microwave devices at cryogenic temperatures.

• OSTI ID: 125813
• Report Number(s): CONF-940603--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
DIELECTRIC PROPERTIES
MATERIALS
MEASURING METHODS
THIN FILMS