A new hydrogen sensor using a polycrystalline diamond-based Schottky diode

Journal Article · Mon Aug 01 04:00:00 EDT 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2055094· OSTI ID:6995280

Kang, W P; Gurbuz, Y; Davidson, J L; Kerns, D V ^[1]

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1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Applied and Engineering Sciences

A new hydrogen sensor utilizing plasma-enhanced chemical vapor deposited diamond in conjunction with palladium (Pd) metal has been developed. The device is fabricated in a layered Pd/Undoped diamond/p-doped diamond Schottky diode configuration. Hydrogen sensing characteristics of the device have been examined in terms of sensitivity, linearity, response rate, and response time as a function of temperature and hydrogen partial pressure. Hydrogen adsorption activation energy is investigated in the temperature range from 27 to 85 C. Analysis of the steady-state reaction kinetics using the I-V method confirm that the hydrogen adsorption process is responsible for the barrier height change in the diamond Schottky diode. The ability to fabricate diamond-based hydrogen sensor on a variety of substrates makes the device very versatile for gas sensing.

• OSTI ID: 6995280
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Journal Issue: 8 Vol. 141:8; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
080800* -- Hydrogen-- Properties & Composition
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CARBON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIAMONDS
ELEMENTAL MINERALS
ELEMENTS
FABRICATION
HYDROGEN
MINERALS
MONITORING
NONMETALS
PROBES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE COATING