Very high temperature operation of diamond Schottky diode

Journal Article · Sat Nov 01 04:00:00 EST 1997 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/55.641444· OSTI ID:562051

Vescan, A; Daumiller, I; Gluche, P; Ebert, W; Kohn, E ^[1]

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1. Univ. of Ulm (Germany). Dept. of Electron Devices and Circuits

Monitoring and control of high-temperature processes becomes more and more important. Here, temperatures can easily reach ranges, where conventional semiconductors cannot be used for sensing and signal conditioning, because of intrinsic carrier generation across the band gap. For these cases wide gap semiconductor materials like SiC, GaN, and diamond are promising candidates. For the first time, the operating temperature of a Schottky diode structure has been pushed to 1,000 C. The diode structure consists of a Si-based Schottky material deposited onto a homoepitaxial boron doped diamond surface. At high temperatures, the forward I--V characteristics is dominated by the thermionic emission (n {approx} 1.01) across a barrier of 1.9 eV height. The reverse characteristics are still dominated by thermally activated defects. The series resistance shows thermal activation associated with the boron doping.

• OSTI ID: 562051
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 11 Vol. 18; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
42 ENGINEERING
DIAMONDS
EXPERIMENTAL DATA
ON-LINE MEASUREMENT SYSTEMS
PROCESS CONTROL
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS