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Title: Development and fabrication of a solar cell junction processing system. Quarterly progress report No. 3, October 1980

Abstract

The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring 4-inch-diameter wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to its delivery to JPL along with detailed operating and maintenance manuals; and (4) to estimate component lifetimes and costs, as necessary for the contract, for the performance of comprehensive analyses in accordance with the Solar Array Manufacturing Industry Costing Standards (SAMICS). Under this contract the automated junction formation equipment to be developed involves a new system design incorporating a modified, government-owned, JPL-controlled ion implanter into a spire-developed pulsed electron beam annealer and wafer transport system. When modified, the ion implanter will deliver a 16 mA beam of /sup 31/P/sup +/ ions with a fluence of 2.5 x 10/sup 15/ ions per square centimeter at an energy of 10 keV. The throughput design goal rate for themore » junction processor is 10/sup 7/ four-inch-diameter wafers per year. Work on the pulsed electron beam subsystem development is described. (WHK)« less

Authors:
Publication Date:
Research Org.:
Spire Corp., Bedford, MA (USA)
OSTI Identifier:
6991851
Report Number(s):
DOE/JPL/955640-80/3
DOE Contract Number:
NAS-7-100-955640
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 07 ISOTOPES AND RADIATION SOURCES; ELECTRON SOURCES; BEAM PULSERS; DESIGN; SOLAR CELLS; ANNEALING; ION IMPLANTATION; ELECTRON BEAMS; ION SOURCES; KEV RANGE 01-10; PHOSPHORUS IONS; PULSED IRRADIATION; SEMICONDUCTOR JUNCTIONS; BEAMS; CHARGED PARTICLES; DIRECT ENERGY CONVERTERS; ENERGY RANGE; EQUIPMENT; HEAT TREATMENTS; IONS; IRRADIATION; JUNCTIONS; KEV RANGE; LEPTON BEAMS; PARTICLE BEAMS; PARTICLE SOURCES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATION SOURCES; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 070201 - Radiation Sources- Design, Fabrication & Operation

Citation Formats

Shiesling, R. Development and fabrication of a solar cell junction processing system. Quarterly progress report No. 3, October 1980. United States: N. p., 1980. Web. doi:10.2172/6991851.
Shiesling, R. Development and fabrication of a solar cell junction processing system. Quarterly progress report No. 3, October 1980. United States. doi:10.2172/6991851.
Shiesling, R. Wed . "Development and fabrication of a solar cell junction processing system. Quarterly progress report No. 3, October 1980". United States. doi:10.2172/6991851. https://www.osti.gov/servlets/purl/6991851.
@article{osti_6991851,
title = {Development and fabrication of a solar cell junction processing system. Quarterly progress report No. 3, October 1980},
author = {Shiesling, R.},
abstractNote = {The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring 4-inch-diameter wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to its delivery to JPL along with detailed operating and maintenance manuals; and (4) to estimate component lifetimes and costs, as necessary for the contract, for the performance of comprehensive analyses in accordance with the Solar Array Manufacturing Industry Costing Standards (SAMICS). Under this contract the automated junction formation equipment to be developed involves a new system design incorporating a modified, government-owned, JPL-controlled ion implanter into a spire-developed pulsed electron beam annealer and wafer transport system. When modified, the ion implanter will deliver a 16 mA beam of /sup 31/P/sup +/ ions with a fluence of 2.5 x 10/sup 15/ ions per square centimeter at an energy of 10 keV. The throughput design goal rate for the junction processor is 10/sup 7/ four-inch-diameter wafers per year. Work on the pulsed electron beam subsystem development is described. (WHK)},
doi = {10.2172/6991851},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Oct 01 00:00:00 EDT 1980},
month = {Wed Oct 01 00:00:00 EDT 1980}
}

Technical Report:

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  • Progress is reported on work to develop automated junction formation equipment involving a design incorporating an ion implanter with a pulsed electron beam annealer and wafer transport system. Assembly and system testing was continued on the development of a pulsed electron beam for 4-inch wafers. Wafers are reported successfully pulsed and solar cells fabricated. Assembly of the transport locks is reported completed. The successful operation of the transport is reported, but reproducibility is not sufficient. An experimental facility to examine potential scaleup problems associated with the proposed ion implanter design has been constructed and tested. Cells have been implanted andmore » found to have efficiency identical to the normal implant process. (LEW)« less
  • The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring 4-inch-diameter wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to its delivery to JPL along with detailed operating and maintenance manuals; and (4) to estimate componentmore » lifetimes and costs, as necessary for the contract, for the performance of comprehensive analyses in accordance with the Solar Array Manufacturing Industry Costing Standards (SAMICS). Under this contract the automated junction formation equipment to be developed involves a new system design incorporating a modified, government-owned, JPL-controlled ion implanter into a Spire-developed pulsed electron beam annealer and wafer transport system. When modified, the ion implanter will deliver a 16 mA beam of /sup 31/P/sup +/ ions with a fluence of 2.5 x 10/sup 15/ ions per square centimeter at an energy of 10 keV. The throughput design goal rate for the junction processor is 10/sup 7/ four-inch-diameter wafers per year.« less
  • The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring 4-inch-diameter wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to its delivery to JPL along with detailed operating and maintenance manuals; and (4) to estimate componentmore » lifetimes and costs, as necessary for the contract, for the performance of comprehensive analyses in accordance with the Solar Array Manufacturing Industry Costing Standards (SAMICS). Progress is reported. (WHK)« less
  • The basic objectives of the program are the following: (1) to design, develop, construct and deliver a junction processing system which will be capable of producing solar cell junctions by means of ion implantation followed by pulsed electron beam annealing; (2) to include in the system a wafer transport mechanism capable of transferring such wafers into and out of the vacuum chamber where the ion implantation and pulsed electron beam annealing processes take place; (3) to integrate, test and demonstrate the system prior to delivery to JPL; and (4) to estimate component lifetimes and costs, as necessary for the contract,more » for the performance of comprehensive analyses in accordance with the solar array manufacturing industry costing standards (SAMICS). Progress is reported. (WHK)« less
  • Fabrication of the first stage of the pulsed electron beam annealer was completed. The objective of these initial checks was to test the functioning of its separate subsystems. Appropriate modifications based upon measurements taken are planned for the next quarter. Annealing of four inch wafers at the required rate must await completion of the wafer transport development and fabrication. There were four groups of tests, those of the mechanical and electrical subsystems, pulse generator, electron beam diode and the annealing process. Annealing experiments were begun at the end of March and will continue after modification of the pulser to insuremore » reproducibility and uniformity. Electrical characterization of diode behavior as a function of varying paramerers is far advanced. Initial tests of subsystems and the pulse generator are complete using the 160 kV test power supply and the first production run of dielectric liners. The complete engineering system design has been formulated, and the accompanying manufacturing detail drawings are about 60 percent complete. The entrance and exit Y tracks of the processing chamber have been designed to interconnect with the 50 carrier cassette elevator locks by means of short three-phase transition track sections located between the outside vacuum locks and the processing chamber.« less