Development and fabrication of a solar cell junction processing system. Draft final report

Technical Report · Fri Jun 01 04:00:00 EDT 1984

DOI:https://doi.org/10.2172/6772311· OSTI ID:6772311

A program was undertaken to develop, construct and deliver to JPL a processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10/sup 7/ wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

• Research Organization: Spire Corp., Bedford, MA (USA)
• DOE Contract Number: NAS-7-100-955640
• OSTI ID: 6772311
• Report Number(s): DOE/JPL/955640-83; ON: DE84013469
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
BEAMS
COST
DIRECT ENERGY CONVERTERS
ELECTRON BEAMS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
HEATING
ION IMPLANTATION
LEPTON BEAMS
MATERIALS HANDLING
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TESTING