Wavelength switching in InGaAs/InP quantum well lasers

Journal Article · Mon Jan 08 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103048· OSTI ID:6985272

Berthold, K; Levi, A F.J.; Tanbun-Ek, T; Logan, R A ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

The threshold current density of multiple and single quantum well lasers as a function of cavity length has been investigated. A dramatic change of the lasing wavelength and a strong increase of the threshold current density is observed for a single quantum well laser when the cavity length is reduced to {similar to}400 {mu}m. In addition, discrete widely separated wavelength switching with changes up to 50 nm is achieved using an intracavity electroabsorption region.

• OSTI ID: 6985272
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:2; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASER CAVITIES
LASERS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT