Bias-controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser

Journal Article · Mon Oct 02 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101601· OSTI ID:5648360

Berthold, K; Levi, A F.J.; Pearton, S J; Malik, R J ^[1]; Jan, W Y; Cunningham, J E ^[2]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)
2. AT T Bell Laboratories, Holmdel, New Jersey 07733

The light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated. Discrete, widely separated, wavelength switching from the first (875 nm) to the second (842 nm) subband is achieved by changing the applied modulator bias. In addition, we show that 2 mW of lasing light power may be modulated with a change in current of 250 {mu}A and a voltage change of 1 V.

• OSTI ID: 5648360
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:14; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
MODULATION
NUMERICAL DATA
PNICTIDES
POWER
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS