Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator

Journal Article · Sun Mar 02 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96507· OSTI ID:6113641

Arakawa, Y; Larsson, A; Paslaski, J; Yariv, A

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half-maximum is generated and a high repetition rate of more than 3 GHz is obtained.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 6113641
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC EQUIPMENT
EQUIPMENT
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GHZ RANGE
GHZ RANGE 01-100
LASER CAVITIES
LASERS
MODULATION
PNICTIDES
PULSE TECHNIQUES
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STARK EFFECT