Large-signal picosecond response of InGaAs/InP quantum well lasers with an intracavity loss modulator

Journal Article · Mon Apr 23 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103147· OSTI ID:6900529

Dykaar, D R; Berthold, K; Levi, A F.J.; Tanbun-Ek, T; Logan, R A ^[1]

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1. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974-2070 (USA)

Single and multiple quantum well laser diodes operating at 1.5 {mu}m are fabricated incorporating an intracavity electroabsorptive loss modulator. Absorption in the diode laser cavity is modulated by a femtosecond dye laser used to generate picosecond electrical transients. Two types of electrical excitation are provided to the modulator: a pulse, using an integrated PIN photodiode and a step, using an integrated photoconductive switch. The full width at half maximum (FWHM) for 100% laser modulation is 53 ps. Direct excitation of the loss segment resulted in pulse widths of 38 ps FWHM and 100% modulation.

• OSTI ID: 6900529
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:17; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
ENERGY LOSSES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LOSSES
MODULATION
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PNICTIDES
POWER LOSSES
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS