Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxy

Journal Article · Wed Feb 01 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94741· OSTI ID:5247075

Sanada, T; Yamakoshi, S; Wada, O; Fujii, T; Sakurai, T; Sasaki, M

AlGaAs/GaAs multiquantum well lasers and GaAs metal-semiconductor field-effect transistors have been monolithically integrated on a semi-insulating GaAs substrate by using molecular beam epitaxy. This integrated laser has exhibited cw operation with the low threshold current of 20 mA at room temperature. The laser/field-effect transistor (FET) characteristics, such as a linear control of laser output power by changing the FET gate voltage, have been confirmed. A conversion ratio of laser output power to FET gate voltage has been measured to be as high as 3.3 mW/V. Rise and fall times of 1 ns have been demonstrated.

• Research Organization: Fujitsu Limited, 1677, Ono, Atsugi 243-01, Japan
• OSTI ID: 5247075
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
LASERS
METALS
MICROELECTRONIC CIRCUITS
MOLECULAR BEAM EPITAXY
MOS TRANSISTORS
MOSFET
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TRANSISTORS