Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate

Journal Article · Fri Feb 01 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95690· OSTI ID:6116756

Sanada, T; Yamakoshi, S; Hamaguchi, H; Wada, O; Fujii, T; Horimatsu, T; Sakurai, T

An AlGaAs/GaAs graded-index waveguide separate-confinement heterostructure (GRIN SCH) laser and a laser driver circuit composed of four GaAs metal-semiconductor field-effect transistors have been monolithically integrated on a semi-insulating GaAs substrate. By introducing the GRIN SCH single quantum well (6 nm thick) structure, the integrated laser has exhibited room-temperature cw operation characteristics with an extremely low threshold current of 15 mA as well as a high quantum efficiency of 50%. Measurements have also shown the conversion ratio of laser output power to input gate voltage of 4.3 mW/V, and the turn-on and turn-off times of the light output of 400 and 900 ps, respectively, demonstrating high sensitivity and fast response performance of the present monolithic laser/driver.

• Research Organization: Fujitsu Ltd., 1677 Ono, Atsugi 243-01, Japan
• OSTI ID: 6116756
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CROSS SECTIONS
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
INTEGRATED CIRCUITS
JUNCTIONS
LASERS
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SENSITIVITY
THRESHOLD CURRENT
TRANSISTORS
WAVEGUIDES