Voltage-controlled Q switching of InGaAs/InP single quantum well lasers

Journal Article · Mon Nov 06 04:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102171· OSTI ID:5295253

Berthold, K; Levi, A F.J.; Tanbun-Ek, T; Logan, R A; Chu, S N.G. ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage-controlled tuning of the lasing threshold current over more than one order of magnitude. In addition, active {ital Q} switching of 7 mW lasing light power with a change in electrical power of {lt}30 {mu}W is achieved.

• OSTI ID: 5295253
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:19; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
TUNING