InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics

Journal Article · Mon Mar 26 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102521· OSTI ID:6972848

Temkin, H; Tanbun-Ek, T; Logan, R A; Lewis, J A; Dutta, N K ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)

We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current ({lt}10 mA), high quantum efficiency (26% per facet) and power output ({similar to}70 mW), and the effective loss of 2--5 cm{sup {minus}1}. We show that the changes in threshold current in short lasers can be explained by a switch from the {ital n}=1 to {ital n}=2 level. The level switching results in a very flat and wide ({gt}1000 A) gain profile.

• OSTI ID: 6972848
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ENERGY GAP
EPITAXY
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
WAVEGUIDES