Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique

Journal Article · Mon Aug 28 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101769· OSTI ID:5482255

Tanbun-Ek, T; Temkin, H; Chu, S N.G.; Logan, R A ^[1]

---

1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

High quality single (SQW) and multiple (MQW) quantum well InGaAs/InP lasers have been realized for the first time utilizing a newly developed interlayer growth technique. The technique utilizes separate confinement SQW and MQW lasers grown by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) having 10--20 nm InGaAs well(s) cladded by 50-nm-thick InGaAsP ({lambda}{sub {ital g}}=1.46 {mu}m) waveguide layers. Carrier confinement and interfacial layer perfection are improved by growth of a few monolayers ({similar to}1 nm) of InP at the QW-barrier interface and by using a novel flushing technique between growth of layers of different compositions. Both SQW and MQW lasers exhibit threshold current density of {similar to}2 kA/cm{sup 2}. Buried-heterostructure lasers grown entirely by MOVPE in a two-growth step show threshold current of 18--40 mA and quantum efficiency as high as 21% facet with good linearity up to 15 mW.

• OSTI ID: 5482255
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:9; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENTS
DATA
DEPOSITION
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INTERFACES
JUNCTIONS
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THIN FILMS
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY