High power AlGaAs-GaAs visible diode lasers
Journal Article
·
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
- Univ. of Connecticut, Storrs, CT (United States). Dept. of Electrical Engineering
- Epi Materials Ltd., Cambridgeshire (United Kingdom)
- Polaroid Corp., Cambridge, MA (United States). Microelectronics and Materials Center
A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime ([approx equal]715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 [mu]m in width with a centerline separation of 9 [mu]m. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10 C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in.
- OSTI ID:
- 6982337
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 6:7; ISSN 1041-1135; ISSN IPTLEL
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER RADIATION
LASERS
PERFORMANCE
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
THRESHOLD CURRENT
VISIBLE SPECTRA
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER RADIATION
LASERS
PERFORMANCE
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
THRESHOLD CURRENT
VISIBLE SPECTRA