High-power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

Journal Article · Mon Jun 08 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97753· OSTI ID:6537873

Tihanyi, P; Wagner, D K; Roza, A J; Vollmer, H J; Harding, C M; Davis, R J; Wolf, E D

We report the first use of chemically assisted ion beam etching to form laser mirrors on GaAlAs graded index separate confinement single quantum well heterostructures grown by metalorganic chemical vapor deposition. Over 80 mW cw optical power is obtained from the etched facet of uncoated 300-..mu..m-long, etched/cleaved 60 ..mu..m stripe devices mounted p side up, and catastrophic failure occurs at a cw power as high as 205 mW. Differential quantum efficiencies for light emitted from the etched facet are 32% pulsed (27% cw) and the threshold current is 145 mA pulsed (150 mA cw).

• Research Organization: McDonnell Douglas Astronautics Company, Opto-Electronics Center, Elmsford, New York 10523
• OSTI ID: 6537873
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER MIRRORS
LASERS
MIRRORS
NUMERICAL DATA
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
SURFACE FINISHING
THRESHOLD CURRENT