Dose-rate effects on radiation-induced bipolar junction transistor gain degradation

Journal Article · Mon Oct 10 00:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112816· OSTI ID:6980783

Wei, A; Kosier, S L; Schrimpf, R D ^[1]; Fleetwood, D M ^[2]; Combs, W E ^[3]

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1. Department of Electrical and Computer Engineering, University of Arizona, Tucson, Arizona 85721 (United States)
2. Sandia National Laboratories, 1515 Eubank SE, Albuquerque, New Mexico 87123 (United States)
3. Naval Surface Warfare Center, Building 2087, Code 6054, Crane, Indiana 47522 (United States)

Analysis of radiation damage in modern [ital NPN] bipolar transistors at various dose rates is performed with a recently introduced charge separation method and PISCES simulations. The charge separation method is verified with measurements on metal-oxide-semiconductor capacitors. Gain degradation is more pronounced at lower dose rates. The charge separation technique reveals that depletion-region spreading and effective recombination velocity are both greater for devices irradiated at lower dose rates.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6980783
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:15; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFICATION
DAMAGE
DOSE-RESPONSE RELATIONSHIPS
ELECTROMAGNETIC RADIATION
GAIN
GAMMA RADIATION
IONIZING RADIATIONS
JUNCTION TRANSISTORS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS