The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

Journal Article · Sun Nov 30 23:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.658951· OSTI ID:644177

Pershenkov, V S; Maslov, V B; Cherepko, S V ^[1]

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1. Moscow Engineering Physics Inst. (Russian Federation); and others

It is shown that emitter-base junction bias is significant for low dose rate irradiation response of npn and pnp bipolar transistors. The effect is more pronounced for pnp transistor. Experimental results are explained in terms of fringing electric field model. The role of fringing field is confirmed by the radiation induced charge neutralization experiment. The experimental results on the effect of emitter junction bias on the elevated temperature high dose rate irradiation of bipolar devices and its application for low dose rate response simulation are discussed.

• OSTI ID: 644177
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRIC FIELDS
EXPERIMENTAL DATA
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
TRAPS