Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488763· OSTI ID:203686

Belyakov, V V; Pershenkov, V S; Shalnov, A V; Shvetzov-Shilovsky, I N ^[1]

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1. Moscow Engineering Physics Inst. (Russian Federation)

A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron traps in oxide. The experimental results on positive charge build-up at low dose-rates and small electric field in oxide are presented. The use of MOS transistor in bipolar mode for investigation of surface peripheral recombination current in bipolar transistor and extraction of MOS structure physical parameters is described.

• OSTI ID: 203686
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
EXPERIMENTAL DATA
IONIZING RADIATIONS
JUNCTION TRANSISTORS
MATHEMATICAL MODELS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
THEORETICAL DATA