Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides

Journal Article · Sun Oct 25 23:00:00 EST 1998 · IEEE Transactions on Nuclear Science

OSTI ID:1381

Cirba, C R ^[1]; Fleetwood, D M; Graves, R J; Michez, A; Milanowski, R J; Saigne, F; Schrimpf, R D; Witczak, S C

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1. Sandia National Laboratories

A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts at lower dose rates. The additional trapped charge near the interface may cause an exponential increase in excess base current, and a resultant decrease in current gain for some NPN bipolar technologies.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1381
• Report Number(s): SAND98-0494J; ON: DE00001381
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
Gain
N-Type Conductors
P-Type Conductors
Transistors