Ceramic epitaxial films and multilayers prepared by MOCVD

Conference · Sat Mar 31 23:00:00 EST 1990

OSTI ID:6978185

Chang, H L.M.; You, H; Parker, J C; Guo, J; Gao, Y; Lam, D J

Titanium and vanadium oxide systems were selected to study the MOCVD process for the growth of epitaxial thin films in single- and multilayer configurations. Epitaxial TiO{sub 2} and VO{sub 2} films were obtained on sapphire (1120), (0001), and (1102) but not on Si (111). Six distinct substrate-film epitaxy relationships have been determined by carefully performed x-ray epitaxy relationships have been determined by carefully performed x-ray diffraction studies using a four-circle x-ray diffractometer. It is concluded that substrate materials and surface orientations are the most important factors for epitaxial film growth while growth temperature seems to play a secondary role. Detailed matching of local atomic arrangements between the film and substrate at the interface is discussed. 5 refs., 6 figs.

• Research Organization: Argonne National Lab., IL (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6978185
• Report Number(s): CONF-900634-1; ON: DE90011090
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CORUNDUM
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELEMENTS
EPITAXY
FILMS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
VANADIUM OXIDES
X-RAY DIFFRACTION