Epitaxial TiO sub 2 and VO sub 2 films prepared by MOCVD (metal-organic chemical vapor deposition)

Conference · Wed Aug 01 04:00:00 EDT 1990

OSTI ID:6598368

Chang, H L.M.; You, H; Guo, J; Lam, D J

Titanium and vanadium oxide systems were selected to study the growth of thin epitaxial film in a metal-organic chemical vapor deposition (MOCVD) process. Epitaxial TiO{sub 2} and VO{sub 2} films were obtained on sapphire (11{bar 2}0), (0001), and (1{bar 1}02) but not on Si(111). Eight distinct substrate-film epitaxial relationships have been determined by x-ray diffraction studies using a four-circle diffractometer. It was found that none of the eight epitaxial systems had a good lattice match between substrate and film. But further investigation revealed that substantial similarity existed in the local atomic patterns of the substrate and the film for all these systems. Nevertheless, it should be emphasized that mismatches of the local atomic patterns for these systems are, in general, substantially larger than those observed in the epitaxial systems containing semiconductor materials such as silicon and GaAs. 11 refs, 4 figs.

• Research Organization: Argonne National Lab., IL (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6598368
• Report Number(s): CONF-900830-2; ON: DE90017806
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
CORUNDUM
DEPOSITION
DIFFRACTION
EPITAXY
FILMS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
SCATTERING
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
VANADIUM OXIDES
X-RAY DIFFRACTION