Heteroepitaxial growth of TiO₂, VO₂, and TiO₂/VO₂ multilayers by MOCVD

Conference · Fri Mar 01 04:00:00 EST 1991

OSTI ID:5280503

Chang, H. L.M. ^[1]; Gao, Y. ^[1]; Guo, J. ^[1]; Foster, C. M. ^[1]; You, H. ^[1]; Zhang, T. J. ^[1]; Lam, D. J. ^[1]

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1. Argonne National Laboratory (ANL), Argonne, IL (United States)

Titanium and vanadium dioxide systems were selected to study the MOCVD process for the growth of oxide epitaxial films. Single-crystal TiO₂ and VO₂ films in single and multilayered configurations have been successfully grown on sapphire (α-AlO₂) single-crystal substrates. Seven distinct epitaxial orientation relationship between the films and the substrates were observed. Discussion on these epitaxial relationships based on the consideration of atomic arrangements of the materials is presented. From our experimental results, we concluded that single layer films (both TiO₂ and VO₂) were grown by the nucleations of three-dimensional clusters. Quantum mechanical calculations of the electronic structures, charge distributions, and energetics of the free substrate surfaces were performed and some results are presented.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 5280503
• Report Number(s): ANL/CP--72131; CONF-9109156--2; ON: DE91018543
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CORUNDUM
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON MICROSCOPY
FILMS
MICROSCOPY
MICROSTRUCTURE
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
VANADIUM COMPOUNDS
VANADIUM OXIDES