Revised nomenclature for defects at or near the Si/SiO sub 2 interface. [MOS devices]

Conference · Wed Jan 01 04:00:00 EST 1992

OSTI ID:6976425

Fleetwood, D M

A revised nomenclature for defects in MOS devices is described which clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. ''Oxide traps'' are simply defects in the SiO{sub 2} layer, and ''interface traps'' are defects at the Si/SiO{sub 2} interface; nothing is presumed about how either communicates with the underlying Si. ''Fixed states'' are defined electrically as trap levels that do not communicate with the Si on the time scale, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e. ''border traps.'' Thus the term ''traps'' is reserved for defect location, and the term ''states'' for electrical response. This defect picture is used to provide new insight into the response of MOS capacitors with 45-nm radiation-hardened oxides to electrical stress and annealing; capacitance-voltage and thermally-stimulated-current measurements are used. 2 figs, 14 refs. (DLC)

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6976425
• Report Number(s): SAND-92-1877C; CONF-921226--3; ON: DE92040975
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CAPACITORS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
INTERFACES
LAYERS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
STANDARDIZED TERMINOLOGY
TRANSISTORS
TRAPS