Revised nomenclature for defects at or near the Si/SiO sub 2 interface. [MOS devices]
A revised nomenclature for defects in MOS devices is described which clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. ''Oxide traps'' are simply defects in the SiO{sub 2} layer, and ''interface traps'' are defects at the Si/SiO{sub 2} interface; nothing is presumed about how either communicates with the underlying Si. ''Fixed states'' are defined electrically as trap levels that do not communicate with the Si on the time scale, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e. ''border traps.'' Thus the term ''traps'' is reserved for defect location, and the term ''states'' for electrical response. This defect picture is used to provide new insight into the response of MOS capacitors with 45-nm radiation-hardened oxides to electrical stress and annealing; capacitance-voltage and thermally-stimulated-current measurements are used. 2 figs, 14 refs. (DLC)
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6976425
- Report Number(s):
- SAND-92-1877C; CONF-921226-3; ON: DE92040975
- Resource Relation:
- Conference: 1992 Institute of Electrical and Electronic Engineers (IEEE) semiconductor interface specialists conference, San Diego, CA (United States), 9-13 Dec 1992
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of oxide traps, interface traps, and border traps'' on metal-oxide-semiconductor devices
New fundamental defects in a-SiO{sub 2}
Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL DEFECTS
STANDARDIZED TERMINOLOGY
SEMICONDUCTOR DEVICES
TRAPS
ANNEALING
CAPACITORS
ELECTRICAL PROPERTIES
INTERFACES
LAYERS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICON
SILICON OXIDES
CHALCOGENIDES
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMIMETALS
SILICON COMPOUNDS
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems