Revised nomenclature for defects at or near the Si/SiO{sub 2} interface

Conference · Tue Sep 01 00:00:00 EDT 1992

OSTI ID:10180634

Fleetwood, D M

A revised nomenclature for defects in MOS devices is described which clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. ``Oxide traps`` are simply defects in the SiO{sub 2} layer, and ``interface traps`` are defects at the Si/SiO{sub 2} interface; nothing is presumed about how either communicates with the underlying Si. ``Fixed states`` are defined electrically as trap levels that do not communicate with the Si on the time scale, but ``switching states`` can exchange charge with the Si. Fixed states presumably are oxide traps, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e. ``border traps.`` Thus the term ``traps`` is reserved for defect location, and the term ``states`` for electrical response. This defect picture is used to provide new insight into the response of MOS capacitors with 45-nm radiation-hardened oxides to electrical stress and annealing; capacitance-voltage and thermally-stimulated-current measurements are used. 2 figs, 14 refs. (DLC)

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10180634
• Report Number(s): SAND-92-1877C; CONF-921226-3; ON: DE92040975
• Resource Relation: Conference: 1992 Institute of Electrical and Electronic Engineers (IEEE) semiconductor interface specialists conference,San Diego, CA (United States),9-13 Dec 1992; Other Information: PBD: [1992]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR DEVICES
CRYSTAL DEFECTS
TRAPS
STANDARDIZED TERMINOLOGY
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
ANNEALING
SILICON
SILICON OXIDES
LAYERS
INTERFACES
ELECTRICAL PROPERTIES
CAPACITORS
426000
440200
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS