New fundamental defects in a-SiO{sub 2}

Journal Article · Wed Dec 01 04:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819119· OSTI ID:20014709

Karna, S P; Kurtz, H A; Shedd, W M; Pugh, R D; Singaraju, B K

Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO{sub 2} structure (localized deviations from stoichiometrically pure Si and SiO{sub 2}) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O{sub 2}Si{triple{underscore}bond}Si{sup {up{underscore}arrow}} atomic structure. The other defect, called the Y-center, is found to have an OSi{sub 2}{triple{underscore}bond}Si{sup {up{underscore}arrow}} structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors.

• Research Organization: Air Force Research Lab., Kirtland AFB, NM (US)
• OSTI ID: 20014709
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON OXIDES
SPIN